Corrigendum to "Real time observation of oxygen chemisorption states on Si(001)-21 during supersonic oxygen molecular beam irradiation"

Teraoka, Yuden; Yoshigoe, Akitaka

Applied Surface Science, 346, P. 580, 2015/08

https://doi.org/10.1016/j.apsusc.2015.02.145

Corrigendum to "Coexistence of passive and active oxidation for O/Si(001) system observed by SiO mass spectrometry and synchrotron radiation photoemission spectroscopy"

Teraoka, Yuden; Moritani, Kosuke*; Yoshigoe, Akitaka

Applied Surface Science, 343, P. 213, 2015/07

https://doi.org/10.1016/j.apsusc.2015.02.147

Erratum; Precise control of Si(001) initial oxidation by translational kinetic energy of O molecules

Teraoka, Yuden; Yoshigoe, Akitaka

Japanese Journal of Applied Physics, 54(3), P. 039204_1, 2015/03

https://doi.org/10.7567/JJAP.54.039204

Erratum; SiO mass spectrometry and Si-2p photoemission spectroscopy for the study of oxidation reaction dynamics of Si(001) surface by supersonic O molecular beams under 1000 K

Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke*

Japanese Journal of Applied Physics, 54(3), P. 039202_1, 2015/03

https://doi.org/10.7567/JJAP.54.039202

Erratum to "In-situ Si-2p core-level spectroscopy using synchrotron radiation for initial oxidation on Si(001) surfaces induced by translational kinetic energy of O molecules"

Teraoka, Yuden; Yoshigoe, Akitaka

Transactions of the Materials Research Society of Japan, 40(1), P. 85, 2015/03

http://doi.org/10.14723/tmrsj.40.85

Synchrotron radiation photoemission spectroscopy for chemical bonding of N atoms in oxynitride films formed at SiO/Si(001) by N beam irradiation

Hachiue, Shunsuke; Teraoka, Yuden

Shinku, 48(5), p.343 - 345, 2005/05

https://doi.org/10.3131/jvsj.48.343

Silicon oxynitride layers were formed by irradiation of nitrogen ion beams at silicon substrates with ultrathin oxide layers. The nitrogen beam was mass-selected N ion beam. The translational kinetic energy was about 3 keV. The dose was 6.310 ions/cm. This value is almost equal to the atom density at the Si(001) surface. Chemical bonding states of irradiated nitrogen atoms were analyzed by photoemission spectroscopy with synchrotron radiation. Although the nitrogen dose was a low density, N-1s photoemission spectra could be deconvoluted into four peaks. The chemical bonding state of each peak was assigned with a reference of a oxide layer thickness dependence of the N-1s photoemission peak profile.

Tuning of dissociative-adsorption processes on Cu{1 0 0} by controlling the kinetic energy of the impinging O molecule

Okada, Michio*; Moritani, Kosuke; Yoshigoe, Akitaka; Teraoka, Yuden; Nakanishi, Hiroshi*; Dio, W. A.*; Kasai, Hideaki*; Kasai, Toshio*

Chemical Physics, 301(2-3), p.315 - 320, 2004/06

https://doi.org/10.1016/j.chemphys.2004.03.015

O molecules adsorb dissociatively on Cu{1 0 0} surfaces to form the oxygen-saturated surface with the coverage of 0.5 ML. It has been found that the oxidation has proceeded more than 0.5 ML by using 2.3-eV-O molecular beams. The kinetics of the adsorption reaction was the first order. This reveals that the collision-induced adsorption results in the adsorption of only one oxygen atom. On the other hand, the reaction kinetics showed the second order in the case of 0.6-eV-O incidence. This implies that tentative molecular adsorption takes place in such low collision energy case.

Actively controlled oxidation of Cu{001} with hyperthermal O molecular beam

Okada, Michio*; Moritani, Kosuke; Goto, Seishiro*; Kasai, Toshio*; Yoshigoe, Akitaka; Teraoka, Yuden

Journal of Chemical Physics, 119(14), p.6994 - 6997, 2003/10

https://doi.org/10.1063/1.1615961

The oxidation of Cu(001) with hyperthermal O molecular beams was investigated using X-ray photoemission spectroscopy in conjunction with a synchrotron light source. The efficiency of oxidation is higher than that with ambient thermal O. Further oxidation under oxygen coverage larger than 0.5 ML occurs rather inefficiently even for the 2.3 eV beam irradiation. We found such slow oxidation of Cu corresponding to the initial stage of the CuO formation can be interpreted in terms of a collision-induced-adsorption mechanism. The kinetics of the dissociative adsorption is well described using the first order kinetics in a simple Langmuir-type adsorption model.

In-situ photoemission spectroscopy for chemical reaction dynamics study of Si(001) oxidation by using high-energy-resolution synchrotron radiation

Teraoka, Yuden; Yoshigoe, Akitaka

Oyo Butsuri, 71(2), p.1523 - 1527, 2002/12

http://joi.jlc.jst.go.jp/JST.Journalarchive/oubutsu1932/71.1523

The translational kinetic energy of incident molecules is an important parameter for the study of surface chemical reaction mechanisms. New adsorption reactions, induced by the O translational kinetic energy of several eV, have been found in the O/Si(001) system by applying the surface photoemission spectroscopy with supersonic molecular beam techniques and the high-energy-resolution synchrotron radiation. The termination of dangling bonds affected dominantly the oxidation of dimer backbonds. By controlling the translational kinetic energy of incident O molecules, the formation of oxide-layers with a sub-nanometer scale is possible at room temperature.

Photoemission spectroscopic study on influence of O translational kinetic energy for Si(001) initial oxidation

Teraoka, Yuden; Yoshigoe, Akitaka

Surface Science, 507-510(1-3), p.797 - 802, 2002/06

no abstracts in English